The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

Importance of Science in Silicide Technology for Nect Technology Node SoC

Kyoichi Suguro

Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2

Kazuo Tsutsui Hiroshi Iwai Ruifei Xiang Koji Nagahiro Takashi Shiozawa Parhat Ahmet Yasutoshi Okuno Michikazu Matsumoto Masafumi Kubota Kuniyuki Kakushima

Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with P + Ion Implantation

Hui Guo Yimen Zhang Yuming Zhang

Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors:Metrology, Dopant Loss, and Novel Electrostatic Junction

G.H.Buh J.W.Lee Y.G.Shin U-In Chung J.T.Moon T.Park G.H.Yon S.J.Hong Y.J.Jee S.B.Kim J.S.Lee C.W.Ryoo J.R.Yoo

Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition

K.Kashihara T.Yamaguchi T.Okudaira T.Tsutsumi K.Maekawa K.Asai M.Yoneda

Characteristics of ultrashallow p + /n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

Sungho Heo Seokjoon Oh Musarrat Hasan H.T.Cho W.A.Krull Hyunsang Hwang

The Characteristics of Functional Phototransistors

S.W.Tan K.P.Liu C.W.Liao Y.S.Huang W.C.Chen H.H.Chen

A New Method for Mapping Ultra-Shallow Junction Leakage Currents

James T C Chen Tatiana Dimitrova Dimitar Dimitrov

Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

Wen-Chang Huang Dong-Rong Cai

Self-Organized (111) Faceted NiSi2 Source and Drain for Advanced SOI MOSFETs

Nobuyuki Mise Yukimune Watanabe Shinji Migita Toshihide Nabatame Hideki Satake Akira Toriumi

The junction challenges in the FinFETs device

Damien Lenoble Gerben Doornbos An de Keersgieter Bartek Pawlak Wilfried Vandervorst Malgorzata Jurczak Thomas Skotnicki

Self-Amorphizing Gas Cluster Ion Beam Technology and Combination with Laser Spike Anneal for Highly Scaled Source Drain Junction

Ho Lee Lucia Feng Yun Wang John Hautala Wesley Skinner Geum-Jong Bae Nae-In Lee Ho-Kyu Kang Hwa Sung Rhee Tetsuji Ueno Myung Sun Kim Ji Hye Yi Hans S.Cho Youngsu Chung Seulgi Kim Hion Suck Baik

会议专题

The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

Importance of Science in Silicide Technology for Nect Technology Node SoC

Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2

Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with P + Ion Implantation

Issues of Ultrashallow Junction for Sub-50 nm Gate Length Transistors:Metrology, Dopant Loss, and Novel Electrostatic Junction

Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition

Characteristics of ultrashallow p + /n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

The Characteristics of Functional Phototransistors

A New Method for Mapping Ultra-Shallow Junction Leakage Currents

Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

Self-Organized (111) Faceted NiSi2 Source and Drain for Advanced SOI MOSFETs

The junction challenges in the FinFETs device

Self-Amorphizing Gas Cluster Ion Beam Technology and Combination with Laser Spike Anneal for Highly Scaled Source Drain Junction

Study of electron transfer in metal-alkanethiol SAM-metal junctions

Formation and Thermal Stability Characteristics of Ni Silicide on Boron Cluster (B18H22) Implanted Source/Drain

Layer Transfer for SOI Structures Using Plasma Hydrogenation

Device Performance Evaluation of PMOS Devices Fabricated by B2H6 PIII/PLAD Process on Poly-Si Gate Doping

FINFET Device Junction Formation Challenges

Modeling and Simulation of Fluorine Related Diffusion in Silicon

Investigation of Relaxed SiGe on Insulator and Strained Si

Bias Dependence of Partially-Depleted SOI Transistor to Total Dose Irradiation