Fabrication of Ti-Al Ohmic Contacts to N-type 6H-SiC with P + Ion Implantation

摘要：

The Ti-Al Ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM(Transfer Length Method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P + ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance Pc as low as 8.64*10^-6Ωcm2 is achieved after annealing in N2 for 5 min at 900℃ The result for sheet resistance Rsh of the implanted layers is 975Ω/□. The low resistance contact would be attributed to the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing.

作者: Hui Guo Yimen Zhang Yuming Zhang

作者单位: Microelectronic School Xidian University, Xian, China, 710071

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）