Investigation of Relaxed SiGe on Insulator and Strained Si

摘要：

Strained silicon on insulator combines the advantages of strained silicon and SOI and becomes one of important materials in future circuit. In this paper, strained silicon was grown on fully relaxed SGOI substrate fabricated by Ge condensation technology. Raman and TEM results indicate that good quality strained silicon with the ε about 1.8％ has formed on the relaxed SGOI substrate.

作者: Weili Liu Chenglu Lin Zengfeng Di Zhitang Song Paul K.Chu

作者单位: Nano technology lab & The Research Center of Semiconductor Functional Film Engineering Technology, S Department of Physics and Material Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloo

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）