Importance of Science in Silicide Technology for Nect Technology Node SoC

摘要：

Silicide materials have been changed according to purposes and application conditions for more than 20years in Si LSIs. The main purpose of using silicides is lowering the resistances of doped Si layers including poly-Si lines. Silicide material was changed from low resistivity refractory metal silicide such as TiSi2 to near-noble metal silicides such as NiSi from the view point of less consumption of Si by silicidation. Actually, the pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with disilicides. However, the thermal stability of monosilicides is required, since those monosilicides can be changed to disilicides, disilicide phase exists in thermodynamic phase diagrams of metal-Si binary systems. In this paper, the importance of science applicable in handling NiSi skillfully in next generation SoC fabrication is discussed.

作者: Kyoichi Suguro

作者单位: Process and Manufacturing Engineering Center, Toshiba Corporation 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）