Characteristics of ultrashallow p + /n junction prepared cluster boron (B18H22) ion implantation and excimer laser annealing

摘要：

Ultrashallow junction (<10nm) p + /n junction formed by B18H22 cluster ion implantation and excimer laser annealing (ELA) is demonstrated. B18H22 + equivalent implantation energy at 0.25 keV readily forms an amorphous-silicon (a-Si) layer without additional Si + or Ge + implantation. After ELA at 500 mJ/cm 2, diffusion of the boron profile was almost negligible, which can be explained by selective melting of a-Si.

作者: Sungho Heo Seokjoon Oh Musarrat Hasan H.T.Cho W.A.Krull Hyunsang Hwang

作者单位: Department of Materials Science and Engineering, #1, Oryong-Dong, Buk-Gu, Gwang-Ju, 500-712, Korea SemEquip, Inc, 34 Sullivan Road, Billerica, Massachusetts, USA, 01862

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）