Modeling and Simulation of Fluorine Related Diffusion in Silicon
Fluorine related diffusion has drawn extensive attention recently, for experiments revealed that co-implanted F in Si can reduce transient enhanced diffusion (TED) of boron. However, disagreement still exists on whether this effect is caused by interaction of F with point defects or that with boron atoms. Also, some unusual F diffusion behaviors are still not thoroughly understood. We attempt to establish a universal model to explain the F related diffusion. In this paper, we will present our first-principles study on F related structures. Based on results of theoretical study, we established a continuum model to simulate F related diffusion extensively, including F diffusion during solid phase epitaxy (SPE) process, F diffusion at low and high concentration levels, and boron TED suppression caused by co-doping with F. The simulation results are in good agreement with the experiments supporting different mechanisms of F related diffusion.
Jinyu Zhang Yoshio Ashizawa Hideki Oka
Fujitsu R&D Center Co., Ltd. Fujitsu Laboratories LTD, Japan
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）