Bias Dependence of Partially-Depleted SOI Transistor to Total Dose Irradiation

摘要：

Through experimental results and analysis by MEDICI simulations, different irradiation response for partially depleted (PD) silicon-on-insulator (SOI) transistors was investigated. The worst-case bias for PD SOI NMOSFETs during total dose irradiation were obtained by irradiated the transistors under different bias. The results of simulation with MEDICI showed that the response of the transistors to total dose radiation strongly depended on the electrical field in the buried oxide layer of the SOI transistors, and the worst electric field bias case for SOI NMOSFETs with total dose radiation was suggested. Good agreement between experimental results and simulation is demonstrated.

作者: Yingmin Wang Xiaohe Wang Guiru Zhao Yunfei En Hongwei Luo Qian Shi Xiaowen Zhang

作者单位: 771st Research Institute of China Electronics Technology Group Corporation, Xi’an, 710054 China electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, 510610

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）