Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition

摘要：

Nitrogen ion implantation (N2 I.I.)prior to Ni film deposition successfully suppresses the agglomeration of nickel silicide (NiSi) formed on arsenic doped silicon substrate in NMOS region, and drastically improves the thermal stability of its resistivity at narrow lines. Using this technique, lower sheet resistance of NiSi narrow line can be kept at high annealing temperature of 650℃ for 30sec. Comparing with argon ion implantation (Ar I.I.), only the N2 I.I. can suppress the agglomeration of NiSi. These results suggest that the implanted N2 ions form Ni-N or Si-N bonds in NiSi, and as a result, these bonds suppress the excess diffusion of Ni and Si atoms during thermal process.

作者: K.Kashihara T.Yamaguchi T.Okudaira T.Tsutsumi K.Maekawa K.Asai M.Yoneda

作者单位: Renesas Technology Corporation 4-1, Mizuhara, Itami-shi, Hyogo, 664-0005, Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）