Layer Transfer for SOI Structures Using Plasma Hydrogenation
The ion-cutting process is becoming more mature and accepted. At the same time, new and innovative ideas are being pursued for the use of silicon-on-insulator (SOI) and Heterostructures produced by ion-cutting, with amazing success. In the conventional Smart-Cut TM or ion-cut technique, high-energy and high-dose hydrogen implantation is performed to effect layer transfer. In this invited presentation, a novel approach to induce layer transfer to form SOI structures with superior top layer quality is described. In this process, low-energy and moderate temperature are employed to plasma hydrogenate the materials to conduct ion-cutting in conjunction with damage engineering. This new process allows more flexible control of the depth of hydrogen accumulation and the location of layer cleavage. The related mechanisms of hydrogen trapping, defect redistribution and layer exfoliation are evaluated. Besides, the effects of strain and strain-free layer on hydrogen regulation are discussed.
Ricky K.Y.Fu Paul K.Chu
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）