Self-Amorphizing Gas Cluster Ion Beam Technology and Combination with Laser Spike Anneal for Highly Scaled Source Drain Junction
High energy borane (B2H6) gas cluster ion beam (GCIB) successfully enables a sub-10nm box-shaped dopant profile without channeling tail, and steep gradient (2.5nm/dec) in lateral direction. pFET using GCIB source/drain extension shows superior suppression of short channel effects and reduces the dependency of drive current on gate overlap capacitance variation for scaled devices. Moreover, the perimeter leakage component in p+/n-well junction was reduced compared to the conventional co-implantation process with pre-amorphization, which might come from novel self-amorphization mechanism by energized clusters without foreign impurities such as Ge and F. For further scaled devices, GCIB can provide more efficient boron activation by laser spike annealing (LSA) while maintaining the scaled extension profile by combination with the reduced temperature spike RTA.
Ho Lee Lucia Feng Yun Wang John Hautala Wesley Skinner Geum-Jong Bae Nae-In Lee Ho-Kyu Kang Hwa Sung Rhee Tetsuji Ueno Myung Sun Kim Ji Hye Yi Hans S.Cho Youngsu Chung Seulgi Kim Hion Suck Baik
Advanced Process Development Project Team, Semiconductor Business, Samsung Electronics Co., Ltd. Ultratech, 3050 Zanker Road, San Jose Epion Corp., 37 Manning Road Billercia MA 01821, USA SAIT,San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do, Korea, 449-900
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）