Self-Organized (111) Faceted NiSi2 Source and Drain for Advanced SOI MOSFETs
Self-organized (111) faceted NiSi2 source and drain structure with segregated dopants in the NiSi2/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The advantages of this source and drain structure are a superior short-channel effect (SCE) immunity and a very small parasitic resistance. The SCE is suppressed by a trapezoidal shape of the channel and by a small variation in the channel length that is obtained thanks to the epitaxial growth of NiSi2 on Si. The significant effects of the channel shape and the variation-free channel length are also confirmed by the numerical simulation. Owing to the low-temperature annealing at 600℃ for NiSi2 formation and dopants activation, wider selections of gate metal and high-k gate dielectric are possible. Moreover, NiSi2 is the most Si-rich phase among nickel silicides family and thermally stable. Self-organized (111) faceted NiSi2 source/drain structure is thus quite promising for future CMOS devices.
Nobuyuki Mise Yukimune Watanabe Shinji Migita Toshihide Nabatame Hideki Satake Akira Toriumi
MIRAI-ASET, AIST Tsukuba SCR Building, Tsukuba, 305-8569, Japan MIRAI-ASRC, AIST, AIST Tsukuba SCR Building, Tsukuba, 305-8569, Japan MIRAI-ASRC, AIST, AIST Tsukuba SCR Building, Tsukuba, 305-8569, Japan;The University of Tokyo, Tokyo
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）