Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2

摘要：

NiSi is a promising material on salicide process. However, the thermal stability of NiSi is still a significant problem. Degradation in sheet resistance of Ni silicide is originated from phase transition from NiSi to NiSi2 and/or agglomeration of the silicide layers. We noticed the phenomenon that the sheet resistance increased irregularly at the temperature region for the phase transition, that is, the peak characteristics appeared in the transformation curve of sheet resistance. In this work, condition of generating the high resistance state was revealed by changing temperature, ramping rate and duration time in the silicidation process.

作者: Kazuo Tsutsui Hiroshi Iwai Ruifei Xiang Koji Nagahiro Takashi Shiozawa Parhat Ahmet Yasutoshi Okuno Michikazu Matsumoto Masafumi Kubota Kuniyuki Kakushima

作者单位: Dept.of Electronics and Applied Physics, Tokyo Institute of Technology, J2-69, 4259 Nagatsuta, Midor Frontier Collaborative Research Center, Tokyo Institute of Technology, J2-68, 4259 Nagatsuta, Midori ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）