Formation and Thermal Stability Characteristics of Ni Silicide on Boron Cluster (B18H22) Implanted Source/Drain

摘要：

The formation and thermal stability characteristics of Ni silicide formed on boron cluster (B18H22) implanted substrate were examined in comparison with those formed on conventional boron and BF2 implanted substrates. The Ni silicide formed on boron cluster implanted substrate showed similar characteristics as those formed on boron and BF2 implanted source/drain. Its sheet resistance, however, increased compared with boron and BF2 cases after high temperature post-silicidation annealing.

作者: W.J .Lee H.T.Cho W.A.Knull J.S.Wang H.D.Lee S.Y.Oh Y.J.Kim Y.Y.Zhang Z.Zhong S.Y.Jung H.H.Ji K.J.Hwang Y.C.Kim

作者单位: Dept.of Electronics Engineering, Chungnam National University, Yusong, Daejeon, 305-764, Korea SemEquip, Inc 34 Sullivan Road, Billerica, Massachusetts, 01862 USA R&D center, MagnaChip Semiconductor Ltd., Cheongju, Choongbuk, Korea Dept.of Materials Eng., Korea University of Technology and Education, Chonan, Chungnam, Korea

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）