Formation and characterization of aluminum-oxide by stack-layered metal structure Schottky diode

摘要：

A double metals structure, Pt/Al/n-InP diode was studied. An Al2O3 thin film was formed at the contact interface of the Pt/Al/InP diode after thermal annealing. It was detected at the diffraction angle of 2θ=20.4° by X-ray diffraction (XRD) analysis after the diode was annealed at 300℃ or 400℃ for 10 min. Also, from secondary ion mass spectrum (SIMS) analysis, it was found that the Al2O3 thin film located at the contact interface of the Pt/Al/n-InP diode. The electrical characteristic was improved due to the formation of aluminum-oxide. The effective barrier height is equal to 0.74 eV which was measured on the annealed sample.

作者: Wen-Chang Huang Dong-Rong Cai

作者单位: Department of Electronic Engineering, Kun Shan University, No.949, Da Wan Rd., Yung-Kang City.Tainan Hsien, 710, Taiwan, China

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）