2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)

Device performance and yield - A new focus for ion implantation

Anthony Renau

Multi-Reversed-Junction LDMOST with Very High Breakdown Voltage per Unit Length

Jianbing Cheng Bo Zhang Zhaoji Li Yufeng Guo Shujuan Yu

The Effects of a Deep N-well Junction on RF Circuit Performance

Song Ye Jun Li

A Simulation Study of a Novel Dual-Channel Body-Tied MOSFET

Yi-Hsuan Fan Jyi-Tsong Lin Yi Chuen Eng Yu-Che Chang Cheng-Hsin Chen Kuan-Yu Lu Chih-Hsuan Tai

Grain Boundary Barrier Height and Threshold Voltage Model of Polycrystalline Silicon Thin Film Transistors

Hongyu He Xueren Zheng

Millisecond Annealing Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Ultra Shallow Junction Formation

Seiichiro Higashi

Carrier Activation in Cluster Boron implanted Si

H. Onoda H. Yoshimi S. Sezaki K. Kawakami J. Reyes and S. Prussin N. Hamamoto T. Nagayama M. Tanjyo S. Umisedo N. Maehara Y. Kawamura Y. Nakashima M. Hashimoto

Depth Profiling of Chemical Bonding States of Impurity Atoms and Their Correlation with Electrical Activity in Si Shallow Junctions

Kazuo Tsutsui Takeo Hattori Hiroshi Iwai Norifumi Hoshino Yasumasa Nakagawa Masaoki Tanaka Hiroshi Nohira Kuniyuki Kakushima Parhat Ahemt Yuichiro Sasaki Bunji Mizuno

Aggressive Design of Ultra-Shallow Junction for Near-Scaling-Limit Bulk Planar CMOS by using Raised Source/Drain Extension Structure and Carbon Co-Implantion Technology

K. Uejima K. Yako T. Yamamoto N. Ikarashi S. Shishiguchi T. Hase M. Hane

Two-Dimensional Cross-Sectional Doping Profiling of Boron-Based Low Energy High Dose Ion Implantations Using Electron Holography Technique

Shu Qin Zhouguang Wang Du Li Y. Jeff Hu Allen McTeer Rob Burke Jaydip Guha

Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping Process

Yuichiro Sasaki

Proposal of a New Electronic Structure Model of Ohmic Contacts for the Future Metallic Source and Drain

Yukihiro Takada Masakazu Muraguchi Tetsuo Endoh Shintaro Nomura Kenji Shiraishi

Heterojunction Fabricated by Deposition of ZnO Films on Boron-doped Nanocrystalline Diamond Film

Jian Huang Linjun Wang Ke Tang Run Xu Jijun Zhang Yiben Xia Xionggang Lu

Contribution of Carbon to Growth of Strained Silicon, Dopant Activation and Diffusion in Silicon

Hiroshi Itokawa

Millisecond Anneal for Ultra-Shallow Junction Applications

Jiong-Ping Lu Yonggen He Yong Chen

Dual Beam Laser Spike Annealing Technology

Yun Wang Shaoyin Chen Michael Shen Xiaoru Wang Senquan Zhou Jeff Hebb David Owen

Enhanced Thermal Measurements of High Power LEDs by Junction Characteristic

Chenning Ge Shiwei Feng Guangchen Zhang Kaikai Ding Peifeng Hu Haitao Deng

Suppression of Phosphorus diffusion using cluster Carbon co-implantation

Tsutomu Nagayama Yoshikazu Hashino Masahiro Hashimoto Hideki Yoshimi Shinichi Sezaki Nobuo Nagai Hiroshi Onoda Masayasu Tanjyo Nariaki Hamamoto Sei Umisedo Yuji Koga Noriaki Maehara Yasunori Kawamura Yoshiki Nakashima

Improvement of Productivity by Cluster Ion Implanter: CLARIS

Masayasu Tanjyo Masahiro Hashimoto Tsutomu Nagayama Hiroshi Onoda Nobuo Nagai Tom N. Horsky Sami K. Hahto Dale C. Jacobson Nariaki Hamamoto Sei Umisedo Yuji Koga Hideyasu Une Noriaki Maehara Yasunori Kawamura Yoshikazu Hashino Yoshiki Nakashima

Advanced Junction Formation for Sub-32nm Logic Devices

Sadanand V. Deshpande Ahmet Ozcan Donald Wall Eunha Kim Oleg Gluschenkov

会议专题

2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)