Multi-Reversed-Junction LDMOST with Very High Breakdown Voltage per Unit Length

摘要：

A novel non-uniform multi-reversed- junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried out. Simulation results show that the breakdown voltage per unit length of the presented device is increased from 7V/μm of the conventional power MOSFET to 16.3V/μm with nearly same drift region and substrate parameters.

作者: Jianbing Cheng Bo Zhang Zhaoji Li Yufeng Guo Shujuan Yu

作者单位: School of Electronic Science & Engineering, Nanjing University of Posts andTelecommunications, Nanji State Key Laboratory of Electronic Thin Films and Integrated Devices, University of ElectronicScienc

会议类型: 国际会议

会议名称: 2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)

会议地点: 上海

会议语种:英文

页码: 1-4

在线出版日期: 2010-05-10（万方平台首次上网日期，不代表论文的发表时间）