Device performance and yield - A new focus for ion implantation
Recent innovations in ion implantationz technology that overcome scaling barriers at 32nm/22nm are reviewed. Some of the hardware improvements will be discussed, but the main focus will be on the process and device data that demonstrates their advantages. These innovations include a cryogenic implant capability that enables a significant reduction in implantation induced crystal damage, molecular implants that show device performance improvements and that use standard ion sources, and various approaches that improve implant performance, particularly when diffusion-less anneal is used.
Anthony Renau
Varian Semiconductor Equipment Associates, Gloucester, MA 01985, USA
国际会议
2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)
上海
英文
1-6
2010-05-10（万方平台首次上网日期，不代表论文的发表时间）