Dual Beam Laser Spike Annealing Technology
A new dual-beam laser spike annealing (DB-LSA) technology is developed to expand the application space of non-melt laser annealing. In the standard LSA configuration, a single narrow laser beam is used to heat the wafer surface from substrate temperature to the peak annealing temperature close to silicon melt. In DB-LSA, a second wide laser beam is incorporated to preheat the wafer. The dual beam system offers flexibility in tuning the temperature and stress profiles. It also enables lower substrate temperature that is compatible with the middle of line applications. In this paper, we will discuss the new capabilities of DB-LSA. Implications on Rs-Xj scaling, defect curing and silicide formations will also be discussed.
Yun Wang Shaoyin Chen Michael Shen Xiaoru Wang Senquan Zhou Jeff Hebb David Owen
Ultratech Inc., San Jose, California, 95134, USA
国际会议
2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)
上海
英文
1-6
2010-05-10（万方平台首次上网日期，不代表论文的发表时间）