A Simulation Study of a Novel Dual-Channel Body-Tied MOSFET

摘要：

In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6％ in top and 53.8％ in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.

作者: Yi-Hsuan Fan Jyi-Tsong Lin Yi Chuen Eng Yu-Che Chang Cheng-Hsin Chen Kuan-Yu Lu Chih-Hsuan Tai

作者单位: Dept. of Electrical Engineering, National Sun Yat-Sen University70 Lien-Hai Rd. Kaohsiung 80424, Taiwan, R.O.C.

会议类型: 国际会议

会议名称: 2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)

会议地点: 上海

会议语种:英文

页码: 1-4

在线出版日期: 2010-05-10（万方平台首次上网日期，不代表论文的发表时间）