Two-Dimensional Cross-Sectional Doping Profiling of Boron-Based Low Energy High Dose Ion Implantations Using Electron Holography Technique
Electron holography, as a powerful method for two-dimensional (2D) doping profiling, is used to study 2D cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line 11B implant and B2H6 plasma doping (PLAD). It has been found that B2H6 PLAD with -6kV voltage and 2×1016/cm2 dose shows slightly deeper junction depth xj, both of the vertical xj(V), and lateral xj(L) and with slightly larger xj(L)/xj(V) ratio, than beam-line 11B implant with 2keV energy and 5×1015/cm2 dose. RTP process with 995oC/20s condition demonstrates higher thermal budget than 1015℃/spike condition – cause deeper xj, but with a similar xj(L)/xj(V) ratio. Good correlations among 2D Electron Holography dopant profiles, 2D dopant profile simulations, and 1D SIMS/ARXPS B profiles have been demonstrated. Very good correlation between 2D Electron Holography doping profiles and device parameters has been demonstrated.
Shu Qin Zhouguang Wang Du Li Y. Jeff Hu Allen McTeer Rob Burke Jaydip Guha
Micron Technology Inc., Boise, ID 83707, USA
国际会议
2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)
上海
英文
1-6
2010-05-10（万方平台首次上网日期，不代表论文的发表时间）