Sidewall resistance reduction for FinFETs by B2H6/Helium Self-Regulatory Plasma Doping Process
The Self-Regulatory Plasma Doping (SRPD) technique with B2H6/Helium gas plasma for PMOS FinFETs has been aggressively developed. Low resistance of the side surface of fins has been successfully demonstrated. The obtained value of the sheet resistance of the side surface is 910 ohm/sq. This sheet resistance is lower than International Technology Roadmap for Semiconductors 2009 Edition (ITRS 2009) required value of maximum drain extension sheet resistance for multi-gate MPU/ASIC (PMOS) at year 2015. The SRPD process reported in this paper will be the excellent doping method for PMOS FinFETs extension for 22 nm node and beyond.
Yuichiro Sasaki
Ultimate Junction Technologies Inc., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka, Japan
国际会议
2010 International Workshop on Junction Technology(2010国际结技术学术研讨会 IWJT 2010)
上海
英文
1-4
2010-05-10（万方平台首次上网日期，不代表论文的发表时间）