Nano-precision surface finishing of Gallium arsenide (GaAs) wafer using magnetic compound fluid (MCF) slurry
Gallium arsenide (GaAs) is a vitally important semiconductor material for high efficiency solar cells due to its high saturated electron velocity and high electron mobility.Nano-precision surface finishing is essential as the vitally important process to obtain the mirror surface, in addition, to remove the remained micro flaws and the damaged subsurface layer.In this study, a novel polishing method using magnetic compound fluid (MCF) slurry is proposed to smooth the GaAs wafer.To explore the potential ability of the MCF slurry for the GaAs surface finishing, the effect of MCF slurry composition on work-surface roughness and material removal were experimentally investigated.The results indicated that (1) regardless of the MCF slurry composition, the work-surface roughness decreases evidently after polishing using MCF slurry;although the final surface quality depends on the composition of MCF slurry, the roughness of the smoothest work-surface attained in the current work was less than 1 nm Ra;(2) the MCF slurry containing bigger-sized abrasive particles result in quicker material removal but worse work-surface quality;(3) the MCF slurry with small size Carbonyl iron particles (CIPs) and abrasive particles is against the material removal and surface roughness.
Magnetic compound fluid Finishing GaAs wafer Surface roughness Material removal
Yonliang Wang Yongbo Wu Mitsuyoshi Nomura Tatsuya Fujii Wenjuan Zhang
Graduate School, Akita Prefectural University, Japan;School of Mechanical & Electronical Engineering Dept.of Machine Intelligence and Systems Engineering, Akita Prefectural University, Japan State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University o
国际会议
长沙
英文
91-94
2016-11-04（万方平台首次上网日期，不代表论文的发表时间）