New Device Architectures for Nano-CMOS Technology Walking to End of the Roadmap and the Impact on RF/Analog Applications

摘要：

With the device continuing scaling down, the transistor physical gate length will reach about 10nm late this decade, and will ultimately arrive at about 6nm at 14nm technology node as end of the roadmap. Many critical issues, such as increased leakage current, short channel effects, high field effects, variability, reliability and parasitic effects, may pose more obstructions in the device scaling way.

作者: Ru Huang

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 7-7

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）