Plasma Doping on 68nm CMOS Device Source/Drain Formations

摘要：

The plasma doping technique offers unique advantages over conventional beam line systems, including system simplification, lower cost, higher throughput, and device performance equivalence or improvement. Plasma doping has been first used on 68nm CMOS device source and drain formations. A PMOS device was doped by B2H6 plasma doping and an NMOS device was doped by AsH3 plasma doping. The devices fabricated by plasma doping processes were intensively evaluated in this paper. In addition to higher throughput, CMOS devices, both PMOS and NMOS devices, fabricated by plasma doping processes showed improved electrical performance to those fabricated by conventional beam line ion implantation, including ～10-20 percent lower contact resistances, similar threshold and sub-threshold characteristics, ～10 percent higher drive currents and transconductances, and better device performance curves.

关键词： plasma doping plasma immersion ion implantation (PIII) CMOS device performance throughput source and drain formations

作者: Shu Qin Allen McTeer Jeff Hu Jennifer Liu Durga Panda Jigish Trivedi

作者单位: Micron Technology, Inc.8000 S.Federal Way Boise, ID 83707, USA

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 8-13

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）