Simulation on Plasma Doping for Shallow Junction Formation

摘要：

Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.

作者: Min Yu Huihui Ji Ming Li Ru Huang Xing Zhang

作者单位: Institute of Microelectronics, Peking University, China, 100871 School of Electronic and Information Engineering, Beihang University, China, 100083

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 14-19

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）