Comparison of chemical binding states between ultra shallow plasma doping(PD)and ion implantation(I/I)combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) by using hard X-ray photoelectron spectroscopy (HX-PES)

摘要：

We measured HX-PES (Si 1s) of ultra low energy ion implantion (I/I) samples combined with Ge pre-amorphizaiton ion implantation (Ge-PAI) before and after spike RTA, and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si-Ge bonding. After spike RTA, PD sample showed superior impurity activation than that of Ge-PAI+I/I sample. Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA.

作者: C.G.Jin M.Kobata Y.Sasaki K.Okashita K.Nakamoto B.Mizuno E.Ikenaga K.Kobayashi

作者单位: Ultimate Junction Technologies Inc., 3-1-1, Yagumonakamachi, Moriguchi, Osaka, 570-8501, Japan Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Hyogo, Japan

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 43-45

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）