Implementation of Molecular Ion Implant Technology for PMOS eztension implants and their compatibility with DRAM process flows

摘要：

Molecular B and molecular C have been implanted in PMOS devices at the source drain extension (SDE) level. Different implant sequences have been compared in which B18H22 and C16H10 have been combined with pre-amorphization and co-implants. B18H22 shows very good Vt roll-off behaviour and low junction leakage. Molecular C stabilizes junctions in post-processing DRAM annealing. Both molecular species show the potential to combine the beneficial effects of a pre-amorphization implant followed by a C and B implant in the formation of ultra-shallow junctions.

作者: Annelies Falepin Philippe Absil Erik Collart Sandra Tran Mark Harris Mike Ameen Thomas Hoffman Erik Rosseel Kanta Saino Naoto Horiguchi

作者单位: Axcelis Technologies Inc., 108 Cherry Hill Drive, Beverly MA IMEC, Kapeldreef 75, B-3001 Leuven, Belgium IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Elpida assignee at IMEC, Kapeldreef 75, B-3001 Leuven, B

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 46-48

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）