This paper describes the applications of Cluster Ion Implantation for beyond 45nm node novel devices.A) Metal/High-k MOSFET: A flash lamp annealing (FLA) has advantage of dopant diffusion-less characteristics, but it requires suitable angle control for optimum gate overlap length. Cluster boron implantation with tilted SDE implantation for p-FETs has superiority over monomer boron implantation with Ge PAI (pre-amorphous implantation) in terms of VTH roll-off s and lon-loff s if FLA is used as activation anneal. Full-metal-gate HfSiON transistors whose gate length is less than 50nm are fabricated with superior electrical characteristics.B) n-MOS Stress engineering: Si:C formation with high carbon substitution has been obtained using Cluster Carbon implantation and msec annealing which leads to higher stress in the channel region.C) Fin-FET: High tilt angle with low energy boron cluster ion implantation is found to improve the retained dose compared to monomer boron. It is suitable for Fin-FET implantation applications.