Profiling of Carrier Properties for Shallow Junctions Using a New Sub-nanometer Step-by-step Etching Technique

摘要：

A new step-by-step etching technique which is combined with electrical and/or physical analyses for in depth profiling of shallow junctions is proposed. The etching process is composed of scarified oxidation by using ozone and removal of the oxide formed. Combining the etching technique and Hall measurements, concentration profiles and mobility profiles of activated carriers were successfully obtained for the samples doped with boron (B) or arsenic (As) by the plasma doping (PD) method.

作者: Kazuo Tsutsui Bunji Mizuno Takeo Hattori Hiroshi Iwai Masamitsu Watanabe Yasumasa Nakagawa Kazunori Sakai Takayuki Kai Cheng-Guo Jin Yuichiro Sasaki Kuniyuki Kakushima Parhat Ahmet

作者单位: Dept.of Electronics and Applied Physics, Tokyo Institute of Technology, Japan Ultimate Junction Technologies Inc., Japan Frontier Research Center, Tokyo Institute of Technology, Japan

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 58-61

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）