Implant And Annealing Process Integration Issues To Reduce Device Variability For <10nm p+ & n+ Ultra-Shallow junctions

摘要：

Both p+ and n+ ultra-shallow junctions (USJ) <10nm deep have been realized by using <200eV equivalent boron energy (<890eV BF2 or <4keV B18H22) or <1 keV equivalent arsenic energy (<500eV P or <1.7keV Sb) implants in combination with diffusion-less high temperature msec annealing and diffusion-less low temperature spike annealing thereby also reducing device micro-variation. Non-contact optical metrology techniques such as therma-probe (TW) and junction photo-voltage (RsL) were used to detect and monitor both implant and annealing equipment micro-uniformity and unique equipment signatures as well as junction quality (dopant activation, residual implant damage and junction leakage current).

作者: John O.Borland

作者单位: J.O.B.Technologies 98-1204 Kuawa St., Aiea, HI 96701

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 68-72

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）