Ultra-Shallow Junction Formation using Flash Annealing and Advanced Doping Techniques
As the demand for ever shallower, highly active and abrupt junctions continues, it is important to look at both the doping and activation portions of junction formation as a unit process. Advanced doping is useless without annealing methods that limit diffusion and provide high levels of electrical activation and new annealing techniques cannot make the junctions shallower than the as-doped profiles. This work has looked at optimizing several types of advanced doping (Plasma Doping and beamline ion implantation of molecular dopants) and a flash lamp-based ms annealing approach. With this combination, very shallow, abrupt and low resistivity junctions can be formed. Careful characterization was used to ensure the accuracy of the sheet resistance and junction depth measurements.Some of the Rs/Xj results are among the best reported in the literature so far. There are many variables in trying to optimize both the doping and activation and there is significant interaction among many of the parameters, so it likely will be possible to further improve the junction performance to continue to meet the 1TRS requirements well into the future. Variations in pre-amorphization and co-implants as well as several parameters of the ms anneal are the major variables.
J.Gelpey S.McCoy A.Kontos L.Godet C.Hatem D.Camm J.Chan G.Papasouliotis J.Scheuer
Mattson Technology Canada Inc.605 West Kent Ave., Vancouver, B.C.V6P6T7 Canada Varian Semiconductor Equipment Associates 35 Dory Rd., Gloucester, MA 01930 USA
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
82-86
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）