Evaluation of Al-doped SPE ultrashallow P+N Junctions for use as PNP SiGe HBT Emitters
The possible use of aluminum-mediated SPE silicon islands as ultrashallow Al-doped emitters in PNP SiGe HBTs is evaluated by electrical characterization of Si PNP test structures and 1-D MEDICI device simulations. The Al-doped emitters display electrical properties similar to B-doped Si. The surface recombination velocity υ at the Al-metal to SPE-Si interface and the minority carrier lifetime t have been determined to be in the ranges of 7 × 105-1.2 × 106 cm/s and 2-3 × 10-8 s, respectively.
Yann Civale Gianpaolo Lorito Cuiqin Xu Lis K.Nanver Ramses van der Toorn
Delft Institute of Microsystems and Nanoelectronics-DIMES, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
97-100
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）