Eztremely Ultrashallow Junctions for a High-Linearity Silicon-on-Glass RF Varactor-Diode Technology
A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (ⅰ) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ⅱ) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p+n diode, and (ⅲ) excimer laser annealing of implanted arsenic to form ultrashallow n+ regions.
Lis K.Nanver Francesco Sarubbi Viktor Gonda Milos Popadic Tom L.M.Scholtes Wiebe de Boer Koen Buisman
Delft Institute of Microsystems and Nanoelectronics (DIMES) Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
101-106
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）