High-power SiGe Heterojunction Bipolar Transistor(HBT)with multiple emitter fingers

摘要：

High-power SiGe HBTs with multiple emitter fingers are developed by using interdigitated structure and each emitter stripe area of 3×45μm2. The value of collector-emitter voltage Vce is carefully selected to ensure these power devices operating at high power levels. Four-Watt RF power with maximum high power-added efficiency (PAE) of 49％ and power gain(Gp) of 6.71dB is achieved when SiGe HBTs operate at frequency of 900 MHz and Vce of 12V. The devices have emitter power linear density achieved as high as 1.47W/mm and the RF power density is 1.6W/μm2. The power performance of these devices under different bias conditions are also studied. These results set a benchmark for high power performance of the devices and show the great potential of SiGe HBTs for RF high-power amplifications.

作者: Shen Pei Zhang Wanrong Jin Dongyue Xie Hongyun Li Jia Gan Junning

作者单位: College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 107-110

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）