An Analytical Model of Drain Induced Barrier Lowering Effect for SiC MESFETs

摘要：

Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, the behavior of DIBL(Drain Induced barrier lowering) effect is investigated for short channel 4H-SiC MESFETs. An analytical model of accurate threshold voltage shift model for the asymmetry short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, an analysis of threshold voltage for short channel device on the L/a(channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND is made, which provides a good basis for short channel device and circuit design.

关键词： 4H Silicon Carbide Metal Semiconductor Field Effect Transistor drain induced barrier lowering effect short channel

作者: Quanjun Cao Yimen Zhang Yuming Zhang

作者单位: Key Lab of Education Ministry for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xian, Shaanxi, 710071, P.R.China

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 111-113

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）