Defect Evolution and C+/F+ Co-implantation in Millisecond Flash annealed Ultra-Shallow Junctions

摘要：

In this paper, we investigate the evolution of extended defects during a msec Flash anneal after a PAI implant and show that during the ultra-fast temperature ramp-up and rump-down, the basic mechanisms that control the evolution of defects are not modified with respect to the relatively slower RTA anneals. In addition, we show that junction depths below 15 nm can be achieved using a USJ fabrication scheme based on the combination of impurity co-implantation with msec Flash anneal.

作者: F.Cristiano F.Milesi E.M.Bazizi P.F.Fazzini S.Paul W.Lerch S.Boninelli R.Duffy A.Pakfar H.Bourdon

作者单位: LAAS-CNRS, University of Toulouse, 7 av.Du Col.Roche, F-31077 Toulouse, France CEA-LETI, Minatec 17 Avenue des Martyrs, 38054 Grenoble Cedex 9, France CEMES-CNRS, University of Toulouse, 29 rue J.Marvig, F-31055 Toulouse, France ST Microelectronics, 8 LAAS-CNRS, University of Toulouse, 7 av.Du Col.Roche, F-31077 Toulouse, France CEMES-CNRS, Universit Mattson Thermal Products GmbH, Daimlerstrasse 10, D-89160, Germany CEMES-CNRS, University of Toulouse, 29 rue J.Marvig, F-31055 Toulouse, France MATIS-CNR-INFM and Uni NXP, Kapeldreef 75, B-3001 Leuven, Belgium ST Microelectronics, 850 rue Jean Monet, F-38926 Crolles, France

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 114-119

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）