Study of Boron Activation by Flash Lamp Annealing from a View of Depth Dependence in Silicon Substrate

摘要：

We studied dopant (boron) activation using flash lamp annealing (FLA) from a view of depth dependence in silicon substrate. As FLA is an annealing method by which temperatures of surface region only rump up and down rapidly, the dopants in deep region of wafer might be unable to be activated. We confirmed that carrier concentration in deep region activated by FLA was surely low compared with that by spike rapid thermal annealing (sRTA). However, the depth dependence of the carrier activation was resulted from the dopant concentration dependence and the degree of the damage recovery, not from the thermal budget dependence.

作者: Takayuki Aoyama Shinichi Kato Kohichi Yamaguchi Takashi Onizawa Yasuo Nara Yuzuru Ohji

作者单位: Semiconductor Leading Edge Technologies, Inc (Selete) Onogawa 16-1, Tsukuba 305-8569, Japan

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 135-138

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）