Recent advances in metallic source/drain MOSFETs

摘要：

This paper reports on recent advances in metallic source/drain MOSFETs covering material engineering, integration issues such as metal/silicide selective etching and electrical performance in both DC and RF regimes. A soft and scalable etching procedure that selectively eliminates metallic platinum (Pt) without altering the platinum silicide phase (PtSi) is proposed. Strategies of Schottky barrier reduction based on low temperature dopant segregation are exemplified when PtSi is coupled to boron and arsenic. Finally, the integration of p-type boron-segregated contacts in thin-film SOI p-MOSFETs reveals state-of-the-art results both for DC and RF operation.

作者: E.Dubois T.Skotnicki G.Larrieu N.Breil R.Valentin F.Danneville D.Yarekha G.Dambrine A.Halimaoui A.Pouydebasque

作者单位: IEMN-UMR CNRS 8520, Avenue Poincare, BP 60069, 59652 Villeneuve dAscq, France STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France IEMN-UMR CNRS 8520, Avenue Poincare, BP 60069, 59652 Villeneuve dAscq, France STMicroelectronics, 8 CEA-LETI, 17 rue desMartyrs, 38054 Grenoble, France

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 139-144

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）