Nickel Silicidation on Sulfur Implanted Si(100)
Silicidation of Ni on sulfur implanted Si(100) substrates with different sulfur doses and nickel thicknesses was studied. The location of the NiSi/Si interface with respect to the implantation depth influences the silicide phase formation at a temperature window from 550℃ to 700℃. As the NiSi/Si interface is deeper than the maximum implantation peak, NiSi is the dominant phase, independent of the S+ implantation dose. However, NiSi2 is formed after silicidation with a thinner Ni layer on a high dose S+ implantation preamorphised Si substrate. High quality epitaxial NiSi2 layers are grown in this case at higher temperatures. It is also found that the agglomeration of the NiSi layer results in a redistribution of the segregated S atoms at the NiSi/Si interface.
Q.T.Zhao S.Mi C.L.Jia U.Breuer S.Lenk S.Mantl
Institute of Bio- and Nanosystems (IBNI-IT), and Center of Nanoelectronic Systems for Information Te Institute of Solid-State Physics (IFF), Forschungszentrum Julich, 52425 Julich, Germany Central Division of Analytical Chemistry, Forschungszentrum Julich, 52425 Julich, Germany
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
145-149
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）