Thermal Stability Improvement of Ni Germanide utilizing Ni-Pd alloy for Nano-scale Ge MOSFETs

摘要：

The thermal stability of Ni germanide utilizing pure Ni and Ni-Pd alloy on Ge-on-Si substrate was studied. The proposed Ni-Pd alloy shows the highly thermal immune Ni germandie due to reduced oxidation and retarded Ni and Ge diffusion. Therefore, the Ni-Pd alloy could be promising for the high mobility Ge MOSFET applications.

作者: Ying-Ying Zhang Hsing-Huang Tseng Hi-Deok Lee Zhun Zhong Shi-Guang Li Soon-Yen Jung Kee-Young Park Ga-Won Lee Jin-Suk Wang Jung-Woo Oh Prashant Majhi

作者单位: Department of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yusong-Gu, Daeje SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 USA SEMATECH, 2706 Montopolis Drive, Austin, TX 78741 USA Intel assignee

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 158-161

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）