Analysis and Improvement on the Uniformity of Sheet Resistance of Nickel Silicide

摘要：

Furnace anneal for the first anneal dramatically improves the uniformity of the sheet resistance of nickel silicide at small area. The main cause of the deterioration in the uniformity of the sheet resistance is not the crystalline state or the implanted impurities but the size of the pattern which nickel silicide is formed at.

作者: Ryuji Tomita Makoto Yasuda Hiroshi Kimura Kazutaka Maeda Shuichiro Ueno Masashige Moritoki

作者单位: NEC Electronics Corp., Process Technology Division 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Advaced Device Development Division Test and Analysis Engineering Division NEC Fabserve Corp., Manufacturing Engineering Services Division

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 162-163

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）