A Pt/GaN Schottky Diode-Type Hydrogen Sensor with a Thin SiO2-Passivated Metal/Semiconductor Junction

摘要：

The hydrogen sensing and response characteristics of and Pt/GaN Schottky diodes with thin SiO2-passivated metal/semiconductor junction under different-concentration hydrogen gases are studied over a wide temperature range in an air atmosphere. Experimentally, the studied device exhibits hydrogen sensing performance, including SF of 14685 and SR of 44636 (in 9970 ppmH2/air), ΔφB of 231.6 meV (in 9970 ppm H2/air),temperature range (300 - 850 K) and voltage-operating sweep under forward and reverse bias conditions. According to the steady-state analysis on adsorption equilibrium, the studied device further shows the excellent performance for high temperature detection and improved activity of hydrogen adsorption reaction.

作者: Tsung-Han Tsai Huey-Ing Chen Kun-Wei Lin Ching-Wen Hung Tzu-Pin Chen Li-Yang Chen Kuei-Yi Chu Wen-Chau Liu

作者单位: Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, TAIWA Department of computer science and information engineering, Chaoyang University of Technology, Taich

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 164-167

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）