Investigation of InP/InGaAs Double Heterojunction Bipolar Transistor (DHBT) with a Step-graded InAlGaAs/InP Collector Structure
An interesting InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure are demonstrated and studied. By use of the step-graded InAlGaAs/InP collector structure at the base-collector heterojunction, the current blocking effect is effectively eliminated. Experimentally, the studied device shows a relatively better common-emitter breakdown voltage and low output conductance though at high temperature. Also, the studied device shows a wider collector current density operation region which over 11 decades in magnitude of collector current density (10-6 to 105 A/cm2). Moreover, the studied device also shows the relatively weaker temperature dependence on the electron impact ionization a. Consequently, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.
Tzu-Pin Chen Wei-Hsin Chen Kuei-Yi Chu Li-Yang Chen Chi-Jhung Lee Shiou-Ying Cheng Jung-Hui Tsai Wen-Chau Liu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Department of Electronic Engineering, National Han University, No.1, Sec.1, Shen-Lung Road, I-Lan, T Department of Electronic Engineering, National Kaohsiung Normal University, 62 Shenjhong Road, Yanch
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
168-171
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）