Influence of Emitter Ledge Width on the Characteristics of InGaP/GaAs Heterojunction Bipolar Transistors

摘要：

A comprehensive study of the inGaP ledge width effect on the performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) is demonstrated. It is shown that the electron density and recombination rate at the surface channel are decreased with increasing the InGaP ledge width. However, the longer InGaP ledge width increases the base-collector junction area which in turn deteriorates the high frequency performance. According to the theoretical analysis and experimental results, the device with an InGaP ledge width of 0.8 μm shows the best and acceptable DC and RF performance.

作者: Kuei-Yi Chu Shiou-Ying Cheng Tzu-Pin Chen Li-Yang Chen Tsung-Han Tsai Jung-Hui Tsai Wen-Chau Liu

作者单位: Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Department of Electronic Engineering, National Ilan University, No.1, Sec.1, Sheng-Lung Road, I-Lan, Department of Electronic Engineering, National Kaohsiung Normal University, 62 Shenjhong Road, Yanch

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 176-178

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）