A Pd/Ozide/AlGaAs(MOS)Junction Resistor-Type Hydrogen Sensor
An interesting Pd/oxide/AlGaAs metal oxide semiconductor (MOS) junction resistor-type hydrogen sensor, based on the current-voltage characteristics in the linear region of an AlGaAs-based PHEMT structure, is fabricated and studied. A simple model is employed to elucidate the hydrogen detection mechanism. The dissociation of H2, diffusion of H atoms and formation of a dipole layer cause a significant decrease in channel resistance. Experimental results show that the VGS bias significantly affects the resistance sensitivity, conductance variation, current variation, transient response, and response time. At 30℃, a significant resistance response of 33.3％ (82.8％) to 4.3 (9970) ppm H2/air is obtained at VGS=-0.6 V. Nevertheless, the largest conductance variation (△G) appears to be in the range between VGS=-0.3 and -0.4 V. The transient response at VGS=-0.3 V shows larger current variations, accompanying the longer response time than those at VGS=0 V.
Ching-Wen Hung Huey-Ing Chen Kun-Wei Lin Tsung-Han Tsai Tzu-Pin Chen Li-Yang Chen Kuei-Yi Chu Wen-Chau Liu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan, TAIWA Department of Computer Science and Information Engineering, Chaoyang University of Technology, 168 J
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
179-182
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）