Improved Formal Passivations of Pseudomorphic High Electron Mobility Transistors
Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly degradations of device performance are caused by the temperature stress during the deposition of SiNx layer and presence of surface traps at the SiNx/AIGaAs interface. Based on these good results, the formal-passivated HEMT is expected to exhibit relatively better long-term operation stability and reliable device characteristics.
Li-Yang Chen Shiou-Ying Cheng Kuei-Yi Chu Jung-Hui Tsai Tzu-Pin Chen Tsung-Han Tsai Wen-Chau Liu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Department of Electronic Engineering, National Ilan University, No.1, Sec.1, Sheng-Lung Road, I-Lan, Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1st Road, Ka
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
183-186
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）