An Advanced Non-classical Self-aligned Quasi-SOI MOSFET with Π-shaped Semiconductor Conductive Layer to Ease Ultra-shallow Junction Requirement

摘要：

In this work, our main aim is to investigate the effects of source/drain thickness on the characteristics of self-aligned quasi-silicon-on-insulator metal-oxide semiconductor field-effect transistor with n-shaped semiconductor conductive layer. According to the simulation results, we found that the short-channel characteristics and self-heating are much sensitive to the source/drain thickness. A reasonable explanation of the results is given. Furthermore, an ultra-thin silicon-on-insulator structure is also designed to be compared with the proposed structure.

作者: Jyi-Tsong Lin Kung-Kai Kao Yi-Chuen Eng Ying-Chieh Tsai Hung-Jen Tseng Yi-Ming Tseng Po-Hsieh Lin Shiang-Shi Kang Jeng-Da Lin Hau-Yuan Huang

作者单位: Dept.of Electrical Engineering, National Sun Yat-Sen University (NSYSU EE) 70 Lien-hai Rd.Kaohsiung 80424, Taiwan ROC

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 187-190

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）