The Intermediate Semiconductor Layer for the Ohmic Contact to Silicon Carbide by Germanium Implantation
An array of TLM(Transfer Length Method) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The Ge+ ion implantations are used to form the intermediate semiconductor layer (ISL) of nickel-metal ohmic contacts to n-type 4H-SiC. The specific contact resistance pc as low as 4.23 × 10-5Ωcm2 is achieved after annealing in N2 at 800℃ for 3 min, which is much lower than that (>900℃) in the typical SiC metallization process. The sheet resistance Rsh of the implanted layers is 1.5VΩ/□. A graphite capping layer is used to protect the surface of SiC during post-implantation annealing.
Hui Guo Da-yong Qiao Yue-hu Wang Yu-ming Zhang Yi-men Zhang
Microelectronics School, Xidian University, Xian, 710071, China Key Lab of Ministry of Education fo Micro and Nano Electromechanical Systems Laboratory, Northwestern Polytechnical University, Xian, 7
国际会议
2008 International Workshop on Junction Technology(第六届结技术国际研讨会)
上海
英文
195-197
2008-05-15（万方平台首次上网日期，不代表论文的发表时间）