Carrier Density Profiling of Ultra-Shallow Junction Layer Through Corrected C-V Plotting

摘要：

The aim of this report is to present and justify a new approach for carrier density profiling in ultra-shallow junction (USJ) layer. This new approach is based on a capacitance measurement model, which takes series impedance, shunt resistance and the presence of a boron skin on the USJ layer into account. It allows us to extract the depletion layer capacitances in the USJ layer from C-V plotting more accurately and hence to obtain better carrier density profiles. Based on this new approach the carrier density profiles of different USJ layers with and without halo-style implants are obtained and discussed.

作者: James Chen Dimitar Dimitrov Tatiana Dimitrova Paul Timans Jeff Gelpey Steve McCoy Wilfried Lerch Silke Paul Detlef Bolze

作者单位: Four Dimensions, Inc., 3140 Diablo Ave, Hayward, California, 94545, USA Mattson Technology, Inc.Fremont, California, USA Mattson Technology Canada, Inc., Vancouver, Canada Mattson Thermal Products GmbH, Dornstadt, Germany IHP, Frankfurt (Oder), Germany

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 198-201

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）