SiC epitazial layers grown by chemical vapor deposition

摘要：

Epitaxial growth of 4H-SiC is reported in a horizontal low-pressure hot-wall(LP-HW-CVD) reactor at temperature 1580℃ and lOOmbar. The substrates were Si-face, n-type, 4H-SiC oriented 8° off-axis toward the1 12- 0 direction. Surface of SiC epitaxial layers were studied. Atomic force microscope ( AFM) and scanning electron microscopy (SEM) were used to investigate the epitaxial layer surface. Fourier transform infrared spectroscopy(FTIR) was used to analysis epitaxial layers thickness. The surface roughness of the samples was analyzed using atomic force microscopy (AFM). Current-voltage (C-V) measurements determined the doping concentration in the films. The structural quality was assessed by X-ray diffraction rocking curves.

关键词： SiC CVD SEM FTIR AFM

作者: Yuehu Wang Yuming Zhang Yimen Zhang Renxu Jia Da Chen

作者单位: School of Microelectronics Xidian University Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xian,Shaaxi, China 710071

会议类型: 国际会议

会议名称: 2008 International Workshop on Junction Technology(第六届结技术国际研讨会)

会议地点: 上海

会议语种:英文

页码: 210-212

在线出版日期: 2008-05-15（万方平台首次上网日期，不代表论文的发表时间）